Low Leakage Junctionless Vertical Pillar Transistor Yu-Chun Yin1, Hung-Chih Chang1 and C.W.Liu1,2* 1 division of Electrical Engineering and Graduate Institute of Electronics Engineering, issue mainland China University, Taiwan, R.O.C, 2 National Nano Device Labs, Hsinchu,Taiwan, R.O.C, *chee@cc.ee.ntu.edu.tw 1. Introduction For sub-30nm fluid dram technology, vertical tower transistor (VPT) is regarded as the most vivid lavatorydidate for mobile phone transistor in the 4F2 cell drift architecture cod to its excellent gate controllability which enhances the subthreshold characteristics. With critical scaling of devicesdevice scaling, junctionless transistor can be applied when the body of semiconductor unit is thinner than 20 nm allowing for full depletion condition in the get land as the device is turned clear up [1] (Fig 1). In this work, we go over the GIDL phenomena by simulation and base an extremely low making water junctionless VPT with partiall y lay drain design. 2. Device simulation 3D nonrepresentational bewitch and the cross-section of the simulated device atomic number 18 render respectively in Fig 2(a) and (b). The gate duration (Lg) and the diameter (D) ar 80nm and 15nm. The gate oxide thickness (Tox_gate) is 4 nm following(a) the ITRS roadmap.

The diameter (d) and length (L_r- drain) of the sunken drain are 8nm and 20nm. The undifferentiated doping concentration of 10-19 cm-3 is unadulterated out the S/D and the channel region. The simulation results are calculated by introducing the drift-diffusion instance, the doping concentration dependent , and the dominion electric airfield depen! dent mobility model. SRH and band to band tunneling (BTBT) recombination/ times are besides applied to account leakage currents. Moreover, the quantum outcome is also include by introducing the density gradient model in the recessed drain region where the diameter (d) is downstairs 10nm. Fig 3 shows the Id-Vg characteristics of the junctionless VPT with and without the recessed drain design and the...If you lack to get a full essay, order it on our website:
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